Capacitive pressure sensors and switches fabricated using strain compensated SiGeB

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1209-1211

  Chatzandroulis, S ^a   Koliopoulou, S ^a   Goustouridis, D ^a   Tsoukalas, D ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

Capacitive sensor; Pressure sensor; Pressure switch; Silicon germanium; Strain compensation

Indexed keywords

CAPACITIVE SENSOR; PRESSURE SENSOR; PRESSURE SWITCH; SILICON GERMANIUM; STRAIN COMPENSATION;

AUTOMOTIVE ENGINEERING; DIAPHRAGMS; GERMANIUM COMPOUNDS; SILICON COMPOUNDS; SILICON WAFERS; SWITCHES;

SENSORS;

EID: 33646490320     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.048     Document Type: Article

References (10)

1. Bryzek J., Petersen K., and McCulley W. IEEE Spectrum 31 5 (1994) 20
2. Seidel H., Csepregi L., Heuberger A., and Baumgartel H. J. Electrochem. Soc. 137 11 (1990) 3626
3. Collins S.D. J. Electrochem. Soc. 144 June (1997) 2242
4. Cho S.T., Najafi K., and Wise K.D. IEEE Trans. Electron. Dev. 39 4 (1992) 836
5. Chau H.L., and Wise K.D. Scaling limits in batch-fabricated silicon pressure sensors. IEEE Trans. Electron. Dev. ED-34 4 (1987) 850-858
6. Herzog J., Csepregi L., and Seidel H. J. Electrochem. Soc. 131 12 (1984) 2969
7. Maszara W.P., and Thompson T. J. Appl. Phys. 72 (1992) 4477
8. Desmond C., Hunt C., and Farrens S. J. Electrochem. Soc. 141 1 (1994) 178
9. Chatzandroulis S., and Tsoukalas D. Analog Integr. Circ. Signal Process 27 1-2 (2001) 31
10. Yazdi N., Mason A., Najafi K., and Wise K.D. Sensor. Actuat. A 84 (2000) 351