Postsilicon oxide etch cleaning process using integrated ashing and an HF vapor process

Journal of the Electrochemical Society

Volumn 153, Issue 6, 2006, Pages

  Kwon, Ohseung ^a,b   Sawin, Herbert H ^a  

^a Massachusetts Institute of Technology   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; OXIDE ETCHING; OXYGEN PLASMA; VACUUM CLUSTER SYSTEM;

CLEANING; FLUOROCARBONS; INDUCTIVELY COUPLED PLASMA; MONOLAYERS; OXYGEN; PLASMA ETCHING;

SILICA;

EID: 33646405457     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2186769     Document Type: Article

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