Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 825-830

  Dworzak, M ^a   Stempel, T ^a   Hoffmann, A ^a   Franssen, G ^b   Grzanka, S ^b   Suski, T ^b   Czernecki, R ^b   Leszczynski, M ^b   Grzegory, I ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

CARRIER EXCITATIONS; EXCITATION DENSITIES; INGAN; NONRADIATIVE RECOMBINATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646393009     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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