Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 683-687

  Susaki, Wataru ^a   Ukawa, Soichro ^a   Tanaka, Masashi ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; OPTICAL WAVEGUIDES; QUANTUM WELL LASERS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

ENERGY SEPARATION; INGAASP BARRIER; INJECTION RATIO;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE; QUANTUM WELL LASERS;

COMPRESSIVELY STRAINED INGAAS QUANTUM WELLS; ENERGY SEPARATIONS; GAAS; HEAVY HOLES; HOLE SUBBANDS; INGAASP; INJECTION RATIO;

EID: 33646186928     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564116     Document Type: Conference Paper

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