Practical development and implementation of 193 nm immersion lithography

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 640-642

  McCallum, Martin ^a   Kameyama, Masaomi ^b   Owa, Soichi ^b  

^a Nikon Precision Europe GmbH   (United Kingdom)

^b NIKON CORPORATION   (Japan)

Author keywords

193 nm Immersion; Catadioptric; Defectivity; Local fill; Lossless polarization

Indexed keywords

ARGON; ELECTROMAGNETIC WAVE POLARIZATION; IMAGING SYSTEMS; NANOTECHNOLOGY; NOZZLES; PRODUCT DESIGN;

193 NM IMMERSION; DEFECTIVITY; LOCAL FILL; LOSSLESS POLARIZATION;

LITHOGRAPHY;

EID: 33646069354     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.251     Document Type: Article

References (4)

1. Owa S., Nagasaka H., Ishii Y., Shiraishi K., and Hirukawa S. SPIE 5754 (2005) 655-668
2. T. Fujiwara, K. Shiraishi, S. Nagaoka, S. Owa, Y. Ishii, Full-field exposure tools for ArF immersion lithography, in: Proceedings of Second International Symposium on Immersion Lithography, 2005.
3. Nishinaga H., Tokuda N., Owa S., Hirukawa S., Tanitsu O., Kudo T., and Tanaka H. SPIE 5744 (2005) 669-680
4. M. McCallum, G. Fuller, S. Owa, From hyper NA to low NA, in: Proceedings of Micro and Nano Engineering, 2005, in press.