Self-surface passivation of CdX (X = Se, Te) quantum dots

Journal of Nanoscience and Nanotechnology

Volumn 6, Issue 3, 2006, Pages 618-623

  Jose, Rajan ^a,c   Zhelev, Zhivko ^a,d   Nagase, Toshimi ^a,d   Bakalova, Rumiana ^a,d   Baba, Yoshinobu ^a,b   Ishikawa, Mitsuru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Luminescence Efficiency; Quantum Dots; Solution Aging; Spectral Modification; Surface Passivation

Indexed keywords

CRYSTALLINITY; LUMINESCENCE EFFICIENCY; SOLUTION AGING; SPECTRAL MODIFICATIONS; SURFACE PASSIVATION;

CRYSTAL GROWTH; ORGANIC SOLVENTS; PASSIVATION; REACTION KINETICS; SEMICONDUCTING CADMIUM COMPOUNDS; SIZE DETERMINATION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; CADMIUM TELLURIDE; NANOMATERIAL; QUANTUM DOT; SELENIUM DERIVATIVE; TELLURIUM;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; LIGHT; MATERIALS TESTING; METHODOLOGY; RADIATION EXPOSURE; SURFACE PROPERTY;

CADMIUM COMPOUNDS; CRYSTALLIZATION; LIGHT; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; QUANTUM DOTS; SELENIUM COMPOUNDS; SURFACE PROPERTIES; TELLURIUM;

EID: 33646009709     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2006.112     Document Type: Article

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