XPS study of Ti/oxidized GaAs interface

Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 1, 2006, Pages 31-36

  Ghita, R V ^a   Logofatu, C ^a   Negrila, C ^a   Manea, A S ^a   Cernea, M ^a   Ciupina, V ^b   Lazarescu, M F ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b OVIDIUS UNIVERSITY   (Romania)

Author keywords

Chemical etching; Oxidation states; Plasma etching; X Ray photoelectron spectroscopy

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INTERFACE STATES; OXIDATION; PHOTOELECTRONS; PHOTONS; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; SUBROUTINES; TITANIUM METALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL ETCHING; III-V COMPOUNDS; INTERMEDIATE STATE; OXIDATION STATE; OXIDE LAYER THICKNESS; SEMI-CONDUCTOR SURFACES; SURFACE SENSITIVITY; VOLATILE ELEMENTS;

TITANIUM OXIDES;

EID: 33645997039     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

1. W. E. Spicer, A. M. Green, J. Vac. Technol. A 11, 1061 (1993).
2. C. C. Chang, P. H. Citrin, B. Schwartz, J. Vac. Sci. Technol 14(4), 943 (1977).
3. R. V. Ghita, C. Logofatu, C Negrila, A. S. Manea, M. Cernea, M. F. Lazarescu, J. Optoelectron. Adv. Mater. 7(6), 3033 (2005).
4. C. W. Wilmsen, R. W. Kee., J. Vac. Sci. Technol 15(4), 1513 (1978).
5. Ting Hou, C. Michael Greenlief, Steven W. Keller. Louis Nelen, John F. Kauffman, Chem. Mater 9, 3181 (1997).
6. Min-Gu Kang, Ji-Wan Kim, Hyung-Ho Park, Jpn. J. Appl. Phys. 39, 7003 (2000).