Matrix-dependent structure of GeSi nanocrystals in SiC

Journal of Electron Microscopy

Volumn 54, Issue 6, 2005, Pages 493-496

  Biskupek, Johannes ^a   Kaiser, Ute ^a   Gärtner, Konrad ^b  

^a UNIVERSITY OF ULM   (Germany)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

HRTEM; Molecular Dynamics; Nanocrystals; Silicon Carbide

Indexed keywords

ION IMPLANTATION; MOLECULAR DYNAMICS; NANOCRYSTALS; SI-GE ALLOYS;

CUBIC STRUCTURE; HIGH DOSE; HIGH-TEMPERATURE ANNEALING; IMPLANTATION TEMPERATURE; INTERFACE ENERGY; IONS IMPLANTATION; MATRIX; SIC MATRIXES;

SILICON CARBIDE;

EID: 33645986497     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfi067     Document Type: Article

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