Current status of fram development and future direction

Ferroelectrics

Volumn 267, Issue , 2002, Pages 245-254

  Kim, Kinam ^a   Lee, Sungyung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

1T1C FRAM; Cell size factor; High density FRAM; Reliability

Indexed keywords

CAPACITORS; DATA STORAGE EQUIPMENT; OPTIMIZATION; PLATINUM; RELIABILITY;

1T1C FRAM; CELL SIZE FACTOR; HIGH DENSITY FRAM;

RANDOM ACCESS STORAGE;

EID: 33645800910     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190211025     Document Type: Conference Paper

References (8)

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3. Kinam Kim, Integrated fenoelectrics, Vol.25, pp.149-167, 1999.
4. N.W.Jang, et al., VLSI Tech. Symp., pp34-35, 2000
5. B-G Jeon, et al., Technical digest of ISSCC, p.38, 2001.
6. DJ. Jung, et al., Technical Dig. of IEDM, pp. 801-804, 2000.
7. DJ. Jung, et al., Technical Dig. of IEDM, pp.279-282, 1999.
8. B-G Jeon, et al., Technical digest of ISSCC, p.39, 2001