Probing residual strain in InGaAs/GaAs micro-origami tubes by micro-Raman spectroscopy

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Bernardi, A ^a   Goi A R ^a,e   Alonso, M I ^a   Alsina, F ^b   Scheel, H ^c   Vaccaro, P O ^d   Saito, N ^d  

^a CSIC   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^e INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN STRAIN; FREE-STANDING MICROTUBES; PHONON FREQUENCY SHIFTS; RESIDUAL STRAIN;

ELASTIC MODULI; ETCHING; MICROELECTROMECHANICAL DEVICES; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TUBES (COMPONENTS);

RESIDUAL STRESSES;

EID: 33645794480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2183353     Document Type: Article

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