Effect of annealing on photoluminescence of ZnO:Al thin films prepared by sol-gel method

Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams

Volumn 18, Issue 1, 2006, Pages 169-172

  Xu, Zi Qiang ^a   Deng, Hong ^a   Xie, Juan ^a   Li, Yan ^a   Chen, Hang ^a   Zu, Xiao Tao ^a   Xue, Shu Wen ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Annealing; Photoluminescence; Redshift; Sol Gel; ZnO:Al thin films

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL GROWTH; PHOTOLUMINESCENCE; SOL-GELS; ZINC COMPOUNDS;

DEEP LEVEL (DL) EMISSION; NEAR BAND EDGE (NBE) EMISSION; REDSHIFT; SOL GEL METHOD; ZNO:AL THIN FILMS (AZO);

OPTICAL FILMS;

EID: 33645791679     PISSN: 10014322     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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