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Volumn 26, Issue 1, 2006, Pages 77-80
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Study on the property of passively Q-switched mode-locked Nd:Gd0.42Y0.58VO4 mixed crystal laser with GaAs absorber grown at low temperature
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Author keywords
GaAs grown at low temperature; Laser diode pumping; Lasers; Nd:Gd0.42Y0.58VO4; Q switched mode locking
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Indexed keywords
LASER MODE LOCKING;
LOW TEMPERATURE PROPERTIES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
CAVITY LENGTH;
LASER DIODE PUMPING;
OPTICAL-OPTICAL CONVERSION EFFICIENCY;
OUTPUT COUPLER;
PASSIVELY Q SWITCHED MODE LOCKED MIXED CRYSTAL LASER ABSORBER;
Q SWITCHED LASERS;
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EID: 33645789354
PISSN: 02532239
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (2)
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References (8)
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