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Volumn 99, Issue 3, 2006, Pages
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Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
ANISOTROPY;
ELECTRON TUNNELING;
EPITAXIAL GROWTH;
FERROMAGNETIC MATERIALS;
MAGNETORESISTANCE;
TRILAYER SYSTEM;
TUNNELING MAGNETORESISTANCE;
UNIAXIAL ANISOTROPY;
SEMICONDUCTOR DEVICES;
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EID: 33645533638
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2171782 Document Type: Article |
Times cited : (2)
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References (19)
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