First principles simulations of antiphase defects on the SP 90° partial dislocation in silicon

Journal of Physics Condensed Matter

Volumn 18, Issue 15, 2006, Pages 3735-3744

  Valladares, Alexander ^a,b   Sutton, A P ^a,c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRONS; PROBABILITY DENSITY FUNCTION;

ANTIPHASE DEFECTS; FIRST PRINCIPLES SIMULATIONS; PARTIAL DISLOCATION;

SILICON;

EID: 33645521071     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/15/018     Document Type: Article

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