Formation of (Bi,La)4Ti3O12 films on Si(100) substrates using ZrO2 buffer layers

Integrated Ferroelectrics

Volumn 75, Issue , 2005, Pages 123-130

  Yoon, Joo Won ^a   Song, Young Uk ^a   Park, Byung Eun ^a   Kim, Chul Ju ^a  

^a University of Seoul   (South Korea)

Author keywords

BLT; FeRAM; Memory window; MFIS structure; ZrO2

Indexed keywords

DEPOSITION; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HYSTERESIS; RAPID THERMAL ANNEALING; SILICON; SOL-GELS; SUBSTRATES; X RAY DIFFRACTION;

BLT; FERAM; MEMORY WINDOW; MFIS STRUCTURE; ZRO2;

THIN FILMS;

EID: 33645509556     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580500414028     Document Type: Conference Paper

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