Nanodomain manipulation for reduction of bit error rate in terabit/inch2-class ferroelectric data storage

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 B, 2006, Pages 2220-2224

  Hiranaga, Yoshiomi ^a   Tanaka, Kenkou ^a   Cho, Yasuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Bit error rate; Ferroelectric data storage; LiTaO3; Scanning nonlinear dielectric microscopy

Indexed keywords

BIT ERROR RATE; FERROELECTRICITY; NANOTECHNOLOGY; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS;

FERROELECTRIC DATA STORAGE; LITAO3; SCANNING NONLINEAR DIELECTRIC MICROSCOPY;

DATA STORAGE EQUIPMENT;

EID: 33645504854     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2220     Document Type: Article

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