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Volumn 80, Issue 2, 2006, Pages 177-180
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Ground state properties of ZnX (X = S, Se and Te) semiconductors
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Author keywords
Band gap at X; Bulk modulus; Pseudopotential; Semiconductor compounds; Total energy
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Indexed keywords
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EID: 33645318994
PISSN: 02529262
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (9)
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References (22)
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