Some physical properties of GaX (X=P, As and Sb) semiconductor compounds using higher-order perturbation theory

Physica B: Condensed Matter

Volumn 357, Issue 3-4, 2005, Pages 305-311

  Jivani, A R ^a   Trivedi, H J ^a   Gajjar, P N ^a   Jani, A R ^a  

^a SARDAR PATEL UNIVERSITY   (India)

Author keywords

Bulk modulus; Equation of state; Pseudopotential method; Total energy

Indexed keywords

CHEMICAL BONDS; CRYSTALLINE MATERIALS; ELASTIC MODULI; ENERGY GAP; EQUATIONS OF STATE; MATHEMATICAL MODELS; PERTURBATION TECHNIQUES; PHYSICAL PROPERTIES;

COVALENT BONDING; HIGHER-ORDER PERTURBATION THEORY; PSEUDOPOTENTIAL METHOD; TOTAL ENERGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 14544267108     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.11.081     Document Type: Article

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