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Volumn 252, Issue 11, 2006, Pages 4023-4025

Possible transition from space-charge-limited to injection-limited conduction in poly(3-hexylthiophene) thin films

Author keywords

Charge injection; Metal organic interface; P3HT thin films; SCLC to ILC transition

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRODES; INTERFACES (MATERIALS);

EID: 33645234000     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.09.036     Document Type: Conference Paper
Times cited : (3)

References (14)
  • 14
    • 33645212729 scopus 로고    scopus 로고
    • note
    • Normally SCLC regime is associated with a power-law dependence of j ∝ V m in a sandwich-structure device. This dependence could be different in devices with gap-cell setup, as Lei et al. [12] observed linear instead of parabolic I -V behaviour in P3HT thin films.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.