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Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 752-755

High-pressure oxygen treatment of ZnO thin films

(6) Kim, B I a Kim, S C a Shin, B C a Kim, T S a Jung, M Y b Yu, Y S a

a Dong Eui University (South Korea)

b Pusan National University (South Korea)

Author keywords

Oxygen treatment; PL; PLD; ZnO

Indexed keywords

DEFECTS; ELECTROMAGNETIC WAVE EMISSION; HALL EFFECT; OXYGEN; PHOTOLUMINESCENCE; PRESSURE; PULSED LASER DEPOSITION; SAPPHIRE; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

FWHM; HALL MEASUREMENT; NEAR BAND EDGE (NBE) EMISSION; OXYGEN TREATMENT; PL;

ZINC OXIDE;

EID: 33645159461 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2005.12.188 Document Type: Conference Paper

Times cited : (4)

References (14)

1
- 0000900190
- S. Choopun, R.D. Vispute, W. Noch, A. Balsamo, R.P. Sharma, T. Venkatesan, A. Lliadis, and D.C. Look Appl. Phys. Lett. 72 1999 3947
- (1999) Appl. Phys. Lett. , vol.72 , pp. 3947
- Choopun, S.¹ Vispute, R.D.² Noch, W.³ Balsamo, A.⁴ Sharma, R.P.⁵ Venkatesan, T.⁶ Lliadis, A.⁷ Look, D.C.⁸

2
- 0031209786
- P. Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa Solid State Commun. 103 1997 459
- (1997) Solid State Commun. , vol.103 , pp. 459
- Zu, P.¹ Tang, Z.K.² Wong, G.K.L.³ Kawasaki, M.⁴ Ohtomo, A.⁵ Koinuma, H.⁶ Segawa, Y.⁷

3
- 2542422532
- D.M. Bagnall, Y.K. Chen, Z. Zhu, and T. Yao Appl. Phys. Lett. 70 1997 2230
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2230
- Bagnall, D.M.¹ Chen, Y.K.² Zhu, Z.³ Yao, T.⁴

4
- 0029307045
- P. Kung, A. Saxler, X. Zhang, D. Walker, T.C. Wang, I. Ferguson, and M. Razeghi Appl. Phys. Lett. 66 1995 2958
- (1995) Appl. Phys. Lett. , vol.66 , pp. 2958
- Kung, P.¹ Saxler, A.² Zhang, X.³ Walker, D.⁴ Wang, T.C.⁵ Ferguson, I.⁶ Razeghi, M.⁷

5
- 25544463102
- M.A. Khan, R.A. Skogman, J.M. Van Hove, D.T. Olson, and J.N. Kuznia Appl. Phys. Lett. 60 1992 1366
- (1992) Appl. Phys. Lett. , vol.60 , pp. 1366
- Khan, M.A.¹ Skogman, R.A.² Van Hove, J.M.³ Olson, D.T.⁴ Kuznia, J.N.⁵

6
- 36448998638
- W. Qian, M. Skowronski, M.D. Graef, K. Doverspike, L.B. Rowland, and D.K. Gaskill Appl. Phys. Lett. 66 1995 1252
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1252
- Qian, W.¹ Skowronski, M.² Graef, M.D.³ Doverspike, K.⁴ Rowland, L.B.⁵ Gaskill, D.K.⁶

7
- 0345806516
- A. Ohotomo, T. Makino, C.H. Chia, N.T. Tuan, Y. Segawa, M. Kawasaki, K. Tamura, and H. Koinuma Appl. Phys. Lett. 76 2000 3549
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3549
- Ohotomo, A.¹ Makino, T.² Chia, C.H.³ Tuan, N.T.⁴ Segawa, Y.⁵ Kawasaki, M.⁶ Tamura, K.⁷ Koinuma, H.⁸

8
- 0037883739
- S.H. Jeong, B.S. Kim, and B.T. Lee Appl. Phys. Lett. 82 2003 2625
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2625
- Jeong, S.H.¹ Kim, B.S.² Lee, B.T.³

9
- 0037671248
- F.K. Shan, and Y.S. Yu Thin Solid Films 435 2003 174
- (2003) Thin Solid Films , vol.435 , pp. 174
- Shan, F.K.¹ Yu, Y.S.²

10
- 2442558699
- F.K. Shan, G.X. Liu, B.I. Kim, B.C. Shin, S.C. Kim, and Y.S. Yu J. Kor. Phys. Soc. 42 2003 1157
- (2003) J. Kor. Phys. Soc. , vol.42 , pp. 1157
- Shan, F.K.¹ Liu, G.X.² Kim, B.I.³ Shin, B.C.⁴ Kim, S.C.⁵ Yu, Y.S.⁶

11
- 0001272026
- T.V. Buthuzi, T.G. Chelidze, A.N. Georgobiani, D.L. Jashiashvili, T.G. Khulordava, and B.E. Tsekvava Phys. Rev. B 58 1998 10692
- (1998) Phys. Rev. B , vol.58 , pp. 10692
- Buthuzi, T.V.¹ Chelidze, T.G.² Georgobiani, A.N.³ Jashiashvili, D.L.⁴ Khulordava, T.G.⁵ Tsekvava, B.E.⁶

12
- 0031991689
- A.N. Georgobiani, and M.B. Kotlyarevskii Nucl. Phys. B 61B 1998 341
- (1998) Nucl. Phys. B , vol.61 , pp. 341
- Georgobiani, A.N.¹ Kotlyarevskii, M.B.²

13
- 2442568905
- F.K. Shan, B.I. Kim, G.X. Liu, Z.F. Liu, J.Y. Sohn, W.J. Lee, B.C. Shin, and Y.S. Yu J. Appl. Phys. 95 2004 4772
- (2004) J. Appl. Phys. , vol.95 , pp. 4772
- Shan, F.K.¹ Kim, B.I.² Liu, G.X.³ Liu, Z.F.⁴ Sohn, J.Y.⁵ Lee, W.J.⁶ Shin, B.C.⁷ Yu, Y.S.⁸

14
- 0030120931
- H.J. Egehaaf, and D. Oelkrug J. Cryst. Growth 161 1996 190
- (1996) J. Cryst. Growth , vol.161 , pp. 190
- Egehaaf, H.J.¹ Oelkrug, D.²

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