Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 54-56

  Yang, A ^a   Lian, H J ^a   Thewalt, M L W ^a   Uemura, M ^b   Sagara, A ^b   Itoh, K M ^b   Haller, E E ^c   Ager III, J W ^c   Lyon, S A ^d  

^a SIMON FRASER UNIVERSITY   (Canada)

^b KEIO UNIVERSITY   (Japan)

^c Lawrence Berkeley National Laboratory   (United States)

^d Princeton University   (United States)

Author keywords

Exciton; Isotopic; Photoluminescence; Silicon

Indexed keywords

BONDING; EPITAXIAL GROWTH; EXCITONS; ISOTOPES; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; SUBSTRATES;

BE NO-PHONON TRANSITIONS; EPITAXIAL LAYER; IMPURITY BOUND EXCITON TRANSITIONS; ISOTOPIC MASS DEPENDENCE; LATTICE PARAMETER; STRAIN-INDUCED SPLITTING;

IMPURITIES;

EID: 33645146225     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.015     Document Type: Conference Paper

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