Strain and defects depth distributions in undoped and boron-doped Si1-xGex layers grown by solid phase epitaxy

Journal of Applied Physics

Volumn 82, Issue 6, 1997, Pages 2887-2895

  Rodriguez A ^a   Rodriguez T ^a   Kling, A ^b   Soares, J C ^b   Da Silva, M F ^c   Ballesteros, C ^d  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^d UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008742185     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366121     Document Type: Article

References (30)

1. T. L. Lin and J. Maserjian, Appl. Phys. Lett. 57, 1422 (1990).
2. B. Y. Tsaur, C. K. Chen, and S. A. Marino, IEEE Electron Device Lett. EDL-12, 293 (1991).
3. H. Jiang and R. G. Elliman, IEEE Trans. Electron Devices ED-43, 97 (1996).
4. D. C. Paine, D. J. Howard, N. G. Stoffel, and J. A. Horton, J. Mater. Res. 5, 1023 (1990).
5. D. C. Paine, N. D. Evans, and N. G. Stoffel, J. Appl. Phys. 70, 4278 (1991).
6. Q. Z. Hong, J. G. Zhu, J. W. Mayer, W. Xia, and S. S. Lau, J. Appl. Phys. 71, 1768 (1992).
7. C. Lee, T. E. Haynes, and K. S. Jones, Appl. Phys. Lett. 62, 501 (1993).
8. A. T. Fiory, J. C. Bean, L. C. Feldman, and I. K. Robinson, J. Appl. Phys. 56, 1227 (1984).
9. C. J. Tsai, A. Dommann, M.-A. Nicolet, and T. Vreeland, Jr., J. Appl. Phys. 69, 2076 (1991).
10. B. T. Chilton, B. Robinson, D. A. Thompson, T. E. Jackman, and J.-M. Baribeau, Appl. Phys. Lett. 54, 42 (1989).
11. H.-J. Herzog, H. Jorke, E. Kasper, and S. Mantl, J. Electrochem. Soc. 136, 3026 (1989).
12. S. Q. Hong, Q. Z. Hong, and J. W. Mayer, J. Appl. Phys. 72, 3821 (1992).
13. D. Y. C. Lie, N. D. Theodore, J. H. Song, and M.-A. Nicolet, J. Appl. Phys. 77, 5160 (1995).
14. R. Gwilliam, G. Curello, B. J. Sealy, A. Rodríguez, M. L. Botella, and T. Rodríguez, Ion Implantation Technology-96 Meeting, Austin, TX (to be published).
15. S. Solmi, E. Landi, and F. Baruffaldi, J. Appl. Phys. 68, 3250 (1990).
16. B. Tillack, P. Zaumseil, G. Morgenstern, D. Krüger, and G. Ritter, Appl. Phys. Lett. 67, 1143 (1995).
17. G. L. Olson and J. A. Roth, Mater. Sci. Rep. 3, 1 (1988).
18. W.-K. Chu, J. W. Mayer, and M.-A. Nicolet, Backscattering Spectrometry (Academic, New York, 1978).
19. A. Timm, W. Zimmermann, and D. Kollewe, Nucl. Instrum. Methods Phys. Res. B 194, 175 (1982).
20. K.-N. Tu, J. W. Mayer, and L. C. Feldman, Electronic Thin Film Science for Electrical Engineers and Materials Scientists (Macmillan, New York, 1992), p. 407.
21. S. P. Baker and E. Arzt, in Properties of Strained and Relaxed Silicon-Germanium, edited by E. Kasper (INSPEC, IEE, London, 1995).
22. J. Wang, Q. Xu, J. Yuan, F. Lu, H. Sun, and X. Wang, J. Appl. Phys. 77, 2974 (1995).
23. H.-J. Herzog, L. Csepregi, and H. Seidel, J. Electrochem. Soc. 131, 2969 (1984).
24. J. P. Dismukes, L. Ekstrom, and R. I. Paff, J. Phys. Chem. 68, 3021 (1964).
25. H.-J. Herzog, in Properties of Strained and Relaxed Silicon-Germanium, edited by E. Kasper (INSPEC, IEE, London, 1995).
26. W.-K. Chu, in Nuclear Physics Applications on Materials Science, edited by E. Recknagel and J. C. Soares (Kluwer, Dordrecht, 1988), p. 117.
27. A. Kling, J. C. Soares, and M. F. da Silva, Radiat. Eff. Defects Solids (in press).
28. P. Y. Timbrell, J.-M. Baribeau, D. J. Lockwood, and J. P. McCaffrey, J. Appl. Phys. 67, 6292 (1990).
29. R. H. M. van de Leur, A. J. G. Schellingerout, F. Tuinstra, and J. E. Mooij, J. Appl. Phys. 64, 3043 (1988).
30. J. W. Matthews, J. Vac. Sci. Technol. 12, 126 (1975).