High resolution thermoreflectance imaging on transistor arrays with defect-induced leakage

Journal De Physique. IV : JP

Volumn 125, Issue , 2005, Pages 423-425

  Tessier, G ^a   Filloy, C ^a   Polignano, M L ^b   Mica, I ^b   Jerosolimski, G ^a   Hole S ^a   Fournier, D ^a  

^a SORBONNE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CHARGE COUPLED DEVICES; DEFECTS; LEAKAGE CURRENTS; LIGHT REFLECTION; TRANSISTORS;

DEFECT FORMATION; DEFECT-INDUCED LEAKAGE; HIGH RESOLUTION THERMOREFLECTANCE IMAGING; SOURCE-TO-DRAIN JUNCTIONS;

IMAGING TECHNIQUES;

EID: 33645047707     PISSN: 11554339     EISSN: 17647177     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2005125099     Document Type: Conference Paper

References (6)

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2. I. Mica, M. L. Polignano, G. Carnevale, P. Ghezzi, M. Brambilla, F. Cazzaniga, M. Martinelli, G. Pavia and E. Bonera, Journal of Physics-Condensed Matter, 14 (2002), 13403-13410
3. G. Tessier, S. Hole and D. Fournier, Opt Lett, 28 (2003), 875-877
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5. G. Tessier, S. Hole and D. Fournier, Appl Phys Lett, 78 (2001), 2267-2269
6. G. Tessier, G. Jerosolimski, S. Hole, D. Fournier and C. Filloy, Rev Sci Instrum, 74 (2003), 495-499