Low-damage ash by atomic hydrogen for porous low-k/Cu interconnects

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 399-403

  Tomioka, Kazuhiro ^a   Soda, Eiichi ^a   Kobayashi, Nobuyoshi ^a   Mochidzuki, Kiyoaki ^b   Takata, Masayuki ^b   Uda, Syuichiro ^b   Yuba, Yoshihiko ^b   Akasaka, Yoichi ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; PERMITTIVITY; PHOTORESISTS; POROUS MATERIALS; TUNGSTEN; COPPER; HYDROGEN; THERMAL EFFECTS;

CATALYZER TEMPERATURE (TC); POROUS MSQ FILM; SUBSTRATE TEMPERATURES (TS); CATALYZER TEMPERATURE; LOW-DAMAGE ASH; METHYL SILSESQUIOXANE (MSQ); SUBSTRATE TEMPERATURES;

DIELECTRIC MATERIALS; INTERCONNECTION NETWORKS;

EID: 33644966158     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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4. K. Mochidzuki, M. Takata, S. Uda, Y. Yuba and Y. Akasaka, Ext. Abstr. The 52 Spring Meet. 2005, Jpn. Soc. Appl. Phys. and Related Soc. 2 924 (2005).