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Volumn 52, Issue 12, 2005, Pages 918-922
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Growth of β-Ga 2O 3 single crystal as a transparent conductive substrate
a a b a c
b
Koha Co Ltd
(Japan)
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Author keywords
Ga 2O 3; GaN; LED; MOVPE; Single crystal; Substrate; Transparent conductive oxide
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Indexed keywords
Β-GA 2O 3;
CURRENT FLOW;
TRANSPARENT CONDUCTIVE OXIDE;
ELECTRIC CONDUCTIVITY;
EPITAXIAL GROWTH;
GALLIUM COMPOUNDS;
LIGHT EMITTING DIODES;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTOELECTRONIC DEVICES;
SINGLE CRYSTALS;
SUBSTRATES;
CRYSTAL GROWTH;
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EID: 33644936430
PISSN: 05328799
EISSN: None
Source Type: Journal
DOI: 10.2497/jjspm.52.918 Document Type: Article |
Times cited : (1)
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References (14)
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