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Volumn 73, Issue 12, 2006, Pages

Flux dependence of the morphology of a tetracene film on hydrogen-passivated Si(100)

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EID: 33644935827     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.121303     Document Type: Article
Times cited : (26)

References (25)
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    • Hydrogen passivation of the surface is used to avoid high density of dangling bonds on the substrate
    • see, for example: PRLTAO 0031-9007 10.1103/PhysRevLett.67.1539
    • Hydrogen passivation of the surface is used to avoid high density of dangling bonds on the substrate, see, for example: J. J. Boland, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.67.1539 67, 1539 (1991);
    • (1991) Phys. Rev. Lett. , vol.67 , pp. 1539
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    • WSxM©
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    • Fractal dimension is calculated for relatively isolated fractals [e.g., the upper-left one in Fig. 3] with box counting:
    • Fractal dimension is calculated for relatively isolated fractals [e.g., the upper-left one in Fig. 3] with box counting: W. S. Rasband, ImageJ, U. S. National Institutes of Health, Bethesda, Maryland, USA http://rsb.info.nih.gov/ ij/ 1997-2005.
    • (1997)
    • Rasband, W.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.