Effect of porosity and adhesion promoter layer on adhesion energy of nanoporous inorganic low-κ

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 213-217

  Damayanti, M ^a,b   Gan, Z H ^a   Sritharan, T ^a   Mhaisalkar, S G ^a   Naman, A ^c   Widodo, J ^b   Tan, H S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c HONEYWELL   (United States)

Author keywords

Adhesion; Four point bend; Porous low

Indexed keywords

ADHESION; INTERFACES (MATERIALS); MECHANICAL PROPERTIES; POROSITY; SILICON COMPOUNDS;

ADHESION STRENGTH; AP/TEOS INTERFACE; FOUR-POINT BEND; POROUS LOW-Κ;

NANOSTRUCTURED MATERIALS;

EID: 33644907993     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.190     Document Type: Conference Paper

References (5)

1. International Technology Roadmap for Semiconductors 2004 Updates [On-line]. Available: http://www.itrs.net/Common/2004Update/ 2004_08_Interconnect.pdf.
2. K. Maex, M.R. Baklanov, D. Samiryan, F. Iacopi, S.H. Brongersma, and Y.Z. Yanovitskaya J. Appl. Phys. 93 2003 11
3. P.G. Charalambides, H.C. Cao, J. Lund, and A.G. Evans Mech. Mater. 8 1990 269
4. J.A. Lee, J.T. Wetzel, C. Merrill, and P.S. Ho Mater. Res. Soc. Symp. Proc. 716 2002 B12.12.1
5. A.R. Akisanya, and N.A. Fleck Int. J. Fract. 55 1992 29