Effect of Ti-rich TiN as a Co-salicide capping layer for 0.15 um embedded flash memory devices and beyond

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 20-24

  Kim, Nam Sung ^a   Mukhopadhyay, M ^a   Wong, Wing Yew ^a   You, Young Seon ^a   Zhao, Jing ^a   Lim, Benjamin ^a   Lee, Kyeong Sik ^a   Shukla, Dhruva ^a   Goh, Inn Swee ^a  

^a SYSTEMS ON SILICON MANUFACTURING CO PTE LTD   (Singapore)

Author keywords

Embedded flash memory; Gate Induced Drain Leakage (GIDL); High voltage transistors; Ti rich TiN

Indexed keywords

LEAKAGE CURRENTS; SILICA; SURFACE CHEMISTRY; TRANSISTORS;

EMBEDDED FLASH MEMORY; GATE-INDUCED DRAIN LEAKAGE (GIDL); HIGH VOLTAGE TRANSISTORS; TI-RICH TIN;

TITANIUM NITRIDE;

EID: 33644902903     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.085     Document Type: Conference Paper

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