Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 81-85

  Liew, S L ^a   Balakrisnan, B ^a   Chow, S Y ^a   Lai, M Y ^a   Wang, W D ^a   Lee, K Y ^a   Ho, C S ^b   Osipowicz, T ^b   Chi, D Z ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Erbium; Germanium; Rapid thermal processing

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; ERBIUM; GERMANIUM; IMPURITIES;

OXYGEN CONTAMINATION; RAPID THERMAL PROCESSING; SACRIFICIAL LAYER; SOLID-STATE REACTION;

THIN FILMS;

EID: 33644883615     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.046     Document Type: Conference Paper

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