Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors

Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 708-714

  Mitrovic, B ^a   Parekh, A ^a   Ramer, J ^a   Merai, V ^a   Armour, E A ^a   Kadinski, L ^a   Gurary, A ^a  

^a Veeco Compound Semiconductor Inc   (United States)

Author keywords

A1. Computer simulation; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; NITRIDES; OPTIMIZATION; SEMICONDUCTOR MATERIALS; VAPOR PHASE EPITAXY;

NITRIDE DEPOSITION; ORGANOMETALLIC VAPOR-PHASE EPITAXY; SEMICONDUCTING III-V MATERIALS;

CHEMICAL REACTORS;

EID: 33644864728     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.107     Document Type: Article

References (4)

1. S. Guo, J. Ramer, L. Kadinski, M. Pophristic, D. Gotthold, I. Ferguson, Manufacturing MOCVD systems and III-nitride materials for solid state lighting, Solid State Lighting, SPIE, in press.
2. A.G. Thompson, R.A. Stall, P. Zawadzki, and G.H. Evans J. Electron. Mater. 25 1996 1487
3. S.R. Schmidt, R.G. Launsby, Understanding Industrial Designed Experiments, Air Academy Press & Associates, Colorado Springs, Colorado.
4. L. Kadinski, V. Merai, A. Parekh, J. Ramer, E.A. Armour, R. Stall, A. Gurary, A. Galyukov, and Yu. Makarov J. Crystal Growth 261 2004