Corrosive effect of slurry inhibitor on copper wafer

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 11, 2005, Pages 2259-2263

  Li, Xiujuan ^a   Jin, Zhuji ^a   Kang, Renke ^a   Guo, Dongming ^a   Su, Jianxiu ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

CMP; Inhibitor; Slurry; ULSI

Indexed keywords

COPPER; CORROSION INHIBITORS; CORROSIVE EFFECTS; POLISHING; SLURRIES; SURFACE TOPOGRAPHY;

CHEMICAL MECHANICAL POLISHING (CMP); COPPER WAFER; POTENTIODYNAMIC POLARIZATION; SLURRY INHIBITOR; STATIC ETCHING RATE;

ULSI CIRCUITS;

EID: 33644837989     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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5. Ein-Eli Y, Abelev E, Starosvetsky D. Electrochemical aspects of copper chemical mechanical planarization (CMP) in peroxide based slurries containing BTA and glycine. Electrochimica Acta, 2004, 49: 1499