RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

Radiation Effects and Defects in Solids

Volumn 160, Issue 10-12, 2005, Pages 685-695

  Torrisi, L ^a,b   Gammino, S ^a   Picciotto, A ^b   Wolowski J ^c   Krasa, J ^d   Laska L ^d   Calcagnile, L ^e   Quarta, G ^e  

^a UNIVERSITY OF MESSINA   (Italy)

^b INFN SEZIONE DI CATANIA   (Italy)

^c IPPLM   (Poland)

^d INSTITUTE OF MATHEMATICS   (Czech Republic)

^e UNIVERSITY OF SALENTO   (Italy)

Author keywords

Ion implantation; Plasma generated by lasers; RBS Analysis

Indexed keywords

BACKSCATTERING; CARBON; GERMANIUM; LASER APPLICATIONS; PLASMAS; SILICON; TANTALUM;

DECONVOLUTION METHOD; ELECTROSTATIC DEFLECTOR; PLASMA-GENERATED BY LASERS; RUTHERFORD BACKSCATTERING ANALYSIS;

ION IMPLANTATION;

EID: 33644806576     PISSN: 10420150     EISSN: 10294953     Source Type: Journal    
DOI: 10.1080/10420150500493295     Document Type: Conference Paper

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