Implantation of ions produced by the use of high power iodine laser

Applied Surface Science

Volumn 217, Issue 1-4, 2003, Pages 319-331

  Torrisi, L ^a,b   Gammino, S ^b   Mezzasalma, A M ^a   Badziak, J ^c   Parys, P ^c   Wolowski, J ^c   Woryna, E ^c   Krasa J ^d   Laska L ^d   Pfeifer, M ^d   Rohlena, K ^d   Boody, F P ^e  

^a UNIVERSITY OF MESSINA   (Italy)

^b INFN LABORATORI NAZIONALI DEL SUD   (Italy)

^c SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^d INSTITUTE OF PHYSICS   (Czech Republic)

^e Ion Light Technologies GmbH   (Germany)

Author keywords

Ion implantation; Laser ablation; Plasma laser; Time of flight

Indexed keywords

HIGH POWER LASERS; KINETIC ENERGY; LASER ABLATION; LASER PULSES; PLASMAS; RADIATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ION ENERGIES;

ION IMPLANTATION;

EID: 0037862954     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00551-8     Document Type: Article

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