Estimation of carrier recombination and electroluminescence emission regions in organic light-emitting field-effect transistors using local doping method

Applied Physics Letters

Volumn 88, Issue 9, 2006, Pages

  Oyamada, Takahito ^a   Sasabe, Hiroyuki ^a   Oku, Yoshiaki ^b   Shimoji, Noriyuki ^b   Adachi, Chihaya ^c  

^a CHITOSE INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b ROHM CO LTD   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRODES; ELECTROLUMINESCENCE; EXCITONS; QUANTUM EFFICIENCY; THYRISTORS; ULTRATHIN FILMS;

CARRIER RECOMBINATION; CURRENT-DRAIN VOLTAGE; GATE BIAS VOLTAGE; LUMINANCE-DRAIN; ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTORS (; SENSING LAYER; ULTRATHIN RUBRENE;

FIELD EFFECT TRANSISTORS;

EID: 33644680332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2181629     Document Type: Article

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