Impact of electrode-side chemical structures on electron mobility in metal/ HfO 2 MISFETs with sub-1nm EOT

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 228-229

  Akasaka, Y ^a   Miyagawa, K ^a,d   Sasaki, T ^a,e   Shiraishi, K ^b,c   Kamiyama, S ^a   Ogawa, O ^a   Ootsuka, F ^a   Nara, Y ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d SANYO ELECTRIC CO LTD   (Japan)

^e SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STRUCTURES; GATE ELECTRODE; METAL ELECTRODE; WELL-CONTROLLED METAL;

ELECTRON MOBILITY; METAL ANALYSIS; MISFET DEVICES; NITROGEN FIXATION; STRUCTURE (COMPOSITION); SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRODES;

EID: 33644613705     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469278     Document Type: Conference Paper

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