Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

Chinese Physics Letters

Volumn 20, Issue 10, 2003, Pages 1741-1743

  Zhang, Qiu Lin ^a   Feng, Bao Hua ^a   Zhang, Dong Xiang ^a   Fu, Pan Ming ^a   Zhang, Zhi Guo ^a   Zhao, Zhi Wei ^b   Deng, Pei Zhen ^b   Xu, Jun ^b   Xu, Xiao Dong ^b   Wang, Yong Gang ^c   Ma, Xiao Yu ^c  

^a INSTITUTE OF PHYSICS   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MICROPROCESSOR CHIPS; OPTICAL PUMPING; PULSE REPETITION RATE; Q SWITCHING; SEMICONDUCTING GALLIUM;

DIODE-PUMPED; HIGH QUALITY; MICROCHIP LASERS; OUTPUT COUPLERS; PASSIVELY Q-SWITCHED; PUMP POWER; YAG;

SATURABLE ABSORBERS;

EID: 0142054059     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/10/325     Document Type: Article

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