Mask pattern qualify assurance based on lithography simulation with fine pixel SEM image

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5992, Issue 1, 2005, Pages

  Kariya, Mitsuyo ^a   Yamanaka, Eiji ^a   Tanaka, Satoshi ^a   Ikeda, Takahiro ^a   Yamaguchi, Shinji ^a   Hashimoto, Kohji ^a   Itoh, Masamitsu ^a   Kobayashi, Hideaki ^b   Kawashima, Tsukasa ^b   Narukawa, Shogo ^b  

^a TOSHIBA CORPORATION   (Japan)

^b DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

Edge extraction; Lithography simulation; Optical proximity correction (OPC); SEM

Indexed keywords

COMPUTER SIMULATION; DATA REDUCTION; IMAGE ANALYSIS; PATTERN RECOGNITION; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY;

EDGE EXTRACTION; LITHOGRAPHY SIMULATION; OPTICAL PROXIMITY CORRECTION (OPC); WAFER SIMULATION;

MASKS;

EID: 33644591290     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.632611     Document Type: Conference Paper

References (2)

1. 2004 ITRS Roadmap "Metrology"
2. Mitsuyo Kariya et al, "Reticle SEM specifications required for lithography simulation", SPIE Vol.5853, p550-555, 2005.