Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET

Microelectronics Journal

Volumn 36, Issue 3-6, 2005, Pages 327-330

  Clarke, W R ^a   Micolich, A P ^a   Hamilton, A R ^a   Simmons, M Y ^a   Muraki, K ^b   Hirayama, Y ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

2D hole system; Field effect transitor; GaAs; p Type

Indexed keywords

ELECTRIC POTENTIAL; FERMI LEVEL; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; METALLIC COMPOUNDS; SURFACE ROUGHNESS;

2D HOLE SYSTEM; GAAS; GAAS/ALGAAS INTERFACE; P-TYPE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33644541113     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.073     Document Type: Conference Paper

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