Visible photoluminescence from the annealed TEOS SiO2

Materials Science and Engineering: B

Volumn 128, Issue 1-3, 2006, Pages 89-92

  Xu, M ^a,b   Xu, S ^b   Ee, Y C ^c,d   Yong, Clare ^c   Chai, J W ^b   Huang, S Y ^b   Long, J D ^b  

^a SICHUAN NORMAL UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Photoluminescence; TEOS SiO2 film

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; PHOTOLUMINESCENCE; RAMAN SCATTERING; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURE; ROOM TEMPERATURE; SIO2 FILM; TEOS SIO2 FILM;

SILICA;

EID: 33644520597     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.11.020     Document Type: Article

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