High-power diode lasers with an Al-free active region at 915 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5989, Issue , 2005, Pages

  Michel, N ^a   Hassiaoui, I ^a   Calligaro, M ^a   Lecomte, M ^a   Parillaud, O ^a   Krakowski, M ^a   Borruel, L ^a   Garcia Tijero J M ^a   Esquivias, I ^a   Sukecki, S ^a   Larkins, E C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CURRENTS;

CLARINET SHAPE; LASER STRUCTURE;

SEMICONDUCTOR LASERS;

EID: 33644517870     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.630738     Document Type: Conference Paper

References (6)

1. M. Krakowski et al., Electronics Letters, Vol. 39, 1122-1123 (2003)
2. S.-C. Auzanneau et al., Proceedings of SPIE, Photonics West 2003, Novel In-Plane Semiconductor Lasers II, Vol. 4995, pp. 184-195 (2003)
3. C. Larat et al., Proceedings of SPIE, Photonics West 2004, Novel In-Plane Semiconductor Lasers III, Vol. 5365, pp. 155-163 (2004)
4. N. Michel et al., European Conference on Optical Communications, ECOC 2005, Glasgow, Scotland, 26-30 September 2005
5. L. Borruel et al., "The clarinet laser: a new semiconductor laser design for high brightness applications", Applied Physics Letters, Vol. 84, p. 101104 (2005)
6. L. Borruel et al., European Conference on Lasers and Electro-Optics, CLEO Europe 2005, Paper CB6-4, Munich, Germany, 13-17 June 2005