Mechanically strained Si-SiGe HBTs

IEEE Electron Device Letters

Volumn 25, Issue 7, 2004, Pages 483-485

  Yuan, F ^a   Jan, S R ^a   Maikap, S ^a   Liu, Y H ^b   Liang, C S ^b   Liu, C W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; FINITE ELEMENT METHOD; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; STRAIN; STRESSES;

BIPOLAR JUNCTION TRANSISTOR; CURRENT GAIN; FINITE ELEMENT SIMULATION; MECHANICAL STRAIN; MECHANICAL STRESS; TENSILE MECHANICAL STRAIN; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3343014149     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831223     Document Type: Article

References (11)

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