Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 434-438

  Brown, M R ^a   Teng, K S ^a   Kestle, A ^b   Smowton, P ^b   Blood, P ^b   Mawby, P A ^a   Wilks, S P ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

AlGaInP laser diodes; Inter valley transport; Multiquantum barrier; Superlattice; Tunnelling

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; ELECTRON TUNNELING; LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; TRANSPORT PROPERTIES;

INTER-VALLEY TRANSPORT; MULTIQUANTUM BARRIERS; SHORT WAVELENGTH LASERS;

QUANTUM THEORY;

EID: 3343008910     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.074     Document Type: Conference Paper

References (14)

1. Hatakoshi G., Itaya K., Ishikawa M., Okajima M., Uematsu Y. IEEE J. Quant. Electron. 27:1991;1476-1482.
2. P.J.A. Thijs, in: IEEE International Semiconductor Laser Conference, 1992, p. 2.
3. Iga K., Uenohara H., Koyama F. IEEE Electron. Lett. 22(19):1986;1008.
4. K. Kishino, A. Kikuchi, Y. Keneko, I. Nomura, Appl. Phys. Lett. 58 (17) (1991).
5. Takagi T., Koyama F., Iga K. Electron. Lett. 27(12):1991;1081-1082.
6. H.C. Lui, Appl. Phys. Lett. 51 (13) (1987).
7. R. Tsu, L. Esaki, Appl. Phys. Lett. 22 (11) (1973).
8. D. Landheer, H.C. Lui, M. Buchanan, R. Stoner, Appl. Phys. Lett. 54 (18) (1989).
9. Marsh A.C. IEEE J. Quant. Electron. 23(4):1987;371-376.
10. Morrison A.P., Lambkin J.D. Opt. Eng. 33(12):1994;3926-3930.
11. Bednarczyk A.C., Bednarczyk J. Phys. Lett. 64:1978;409.
12. Zhang X.H., Chua S.J., Fan W.J. Appl. Phys. Lett. 73(8):1998;1098-1100.
13. Krijn M.P.C.M. Semicond. Sci. Technol. 6:1991;27-31.
14. Blood P., et al. IEEE J. Quant. Electron. 36(6):2000;742-750.