Undoped InSb schottky detector for gamma-ray measurements

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 3172-3175

  Hishiki, Shigeomi ^a   Kanno, Ikuo ^a   Sugiura, Osamu ^b   Xiang, Ruifei ^b   Nakamura, Tatsuya ^c   Katagiri, Masaki ^c  

^a KYOTO UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Cryogenic detector; Depletion layer thickness; Gamma ray; InSb; Low temperature; Schottky barrier height; Semiconductor detector

Indexed keywords

ELECTRODES; GAMMA RAYS; GERMANIUM; OPTICAL RESOLVING POWER; SEMICONDUCTOR JUNCTIONS; SILICON;

CRYOGENIC DETECTOR; DEPLETION LAYER THICKNESS; SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33144490463     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.869817     Document Type: Conference Paper

References (9)

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