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Volumn 512, Issue 1-2, 2003, Pages 433-439

Performance of epitaxial GaAs radiation detectors grown by vapour-based chemical reaction

Author keywords

Epitaxial GaAs; Radiation detector

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; VAPORS;

EID: 0142031529     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01923-5     Document Type: Conference Paper
Times cited : (5)

References (10)
  • 1
    • 0041564558 scopus 로고    scopus 로고
    • Recent advances in compound semiconductor radiation detectors
    • submitted for publication
    • P.J. Sellin, Recent advances in compound semiconductor radiation detectors, Nucl. Instr. and Meth. A, submitted for publication.
    • Nucl. Instr. and Meth. A
    • Sellin, P.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.