14xx-nm high brightness tapered diode lasers grown by solid-source MBE

IEEE Photonics Technology Letters

Volumn 18, Issue 5, 2006, Pages 655-657

  Kallenbach, Senta ^a   Aidam, Rolf ^a   Lösch, Rainer ^a   Kaufel, Gudrun ^a   Kelemen, Márc Tibor ^a   Mikulla, Michael ^a   Weimann, Günter ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

14xx; High brightness; InGaAsP; Semiconductor lasers; Solid source molecular beam epitaxy (SSMBE)

Indexed keywords

DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS;

DIFFRACTION-LIMITED OUTPUT POWER; HIGH-POWER TAPERED DIODE LASER; RELIABILITY TESTS; SOLID-SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTOR LASERS;

EID: 33144458756     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.870124     Document Type: Article

References (8)

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