Keys to advanced single wafer cleaning - Gas contend, bubble size distribution and chemistry

ECS Transactions

Volumn 1, Issue 3, 2006, Pages 158-163

  Lippert, A ^a   Engesser, P ^a   Gleissner, A ^a   Koffler M ^a   Kumnig, F ^a   Obweger, R ^a   Pfeuffer, A ^a   Rogatschnig, R ^a   Okorn Schmidt, H ^a  

^a SEZ AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BUBBLES (IN FLUIDS); CLEANING; ELECTROCHEMISTRY; PARAMETER ESTIMATION; REMOVAL; SEMICONDUCTOR DEVICE MANUFACTURE;

BUBBLE SIZE DISTRIBUTION; MEGASONIC CLEANING SYSTEM; POLY-LINE STRUCTURES; SINGLE WAFER;

SILICON WAFERS;

EID: 32844454870     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. F. Holsteyns, K. Lee, S. Graf, R. Palmans, G. Vereecke and P.W. Mertens, 7th International Symposium on Ultra Clean Processing of Silicon Surface 2004, Abstract Book, p. 113.
3. A. Lippert, P. Engesser, G. Ferrell, J. Klitzke, M. Köffler, F. Kumnig, J. Leberzammer, R. Obweger, A. Pfeuffer, H. Sax and H. Okorn-Schmidt, 7th International Symposium on Ultra Clean Processing of Silicon Surface 2004, Abstract Book, p. 111.
4. H. Frenzel, H. Schultes, Z. Phys. Chem. 27, 421 (1934).