Molecular electronics, negative differential resistance, and resonant tunneling in a poled molecular layer on Al/LiF electrodes having a sharp density of states

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 323-325

  Lu, Z H ^a   Khangura, R S ^a   Dharma Wardana, M W C ^b   Zgierski, Marek Z ^b   Ritchie, Douglas ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON TRANSITIONS; INTEGRATION; LIQUID CRYSTALS; SCANNING TUNNELING MICROSCOPY; ULTRATHIN FILMS;

DENSITY OF STATES (DOS); MOLECULAR ELECTRONICS (ME); NEGATIVE DIFFERENTIAL RESISTANCE (NDR); SHARP FEATURES (SF);

LITHIUM COMPOUNDS;

EID: 3242889321     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1764935     Document Type: Article

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