Silicon drift detectors with enlarged sensitive areas

X-Ray Spectrometry

Volumn 33, Issue 4, 2004, Pages 246-252

  Eggert, T ^a   Boslau, O ^a   Goldstrass, P ^a   Kemmer, J ^a  

^a KETEK GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DETECTORS; X RAY DETECTORS;

ACTIVE AREA; ENERGY DISPERSIVE X-RAY; ENERGY RESOLUTIONS; ENERGY-DISPERSIVE X-RAYS; HIGH RESOLUTION; HIGH-COUNT RATE; NEW DETECTORS; SENSITIVE AREA; SILICON DRIFT DETECTOR; X-RAY DETECTOR;

ELECTRONIC PROPERTIES;

EID: 3242881028     PISSN: 00498246     EISSN: None     Source Type: Journal    
DOI: 10.1002/xrs.711     Document Type: Conference Paper

References (15)

1. Kemmer J, Lutz G, Prechtel U, Schuster K, Sterzik M, Strüder L, Ziemann T. Nucl. Instrum. Methods A 1990; 288: 87.
2. Hartmann R, Hauff D, Krisch S, Lechner P, Lutz G, Richter RH, Seitz H, Strüder L, Bertuccio G, Fasoli L, Fiorini C, Gatti E, Longoni A, Pinotti E, Sampietro M. IEDM Tech. Dig. 1994; 535.
3. Lechner P, Fiorini C, Hartmann R, Kemmer J, Krause N, Leutenegger P, Longoni A, Soltau H, Stötter D, Stötter R, Strüder L, Weber U. Nucl. Instrum. Methods A 2001; 458: 281.
4. Gatti E, Rehak P. Nucl. Instrum. Methods A 1984; 235: 224.
5. Kemmer J, Lutz G. Nucl. Instrum. Methods A 1987; 253: 365.
6. Kemmer J, Lutz G, Belau E, Prechtel U, Welser W. Nucl. Instrum. Methods A 1987; 253: 378.
7. Fiorini C, Lechner P. IEEE Trans. Nucl. Sci. 1999; 46: 761.
8. Pinotti E, Bräuninger H, Findeis N, Gorke H, Hauff D, Holl P, Kemmer J, Lechner OP, Lutz G, Kink W, Meidinger N, Metzner G, Predehl P, Reppin C, Strüder L, Trümper J, v. Zanthier C, Kendziorra E, Staubert R, Radeka V, Rehak P, Bertuccio G, Gatti E, Longoni A, Pullia A, Sampietro M. Nncl. Instrum. Methods A 1993; 326: 85.
9. Lutz G. Semiconductor Radiation Detectors. Springer: Berlin, 1999.
10. Pinotti E, Longoni A, Gambelli M, Strüder L, Lechner P, v. Zanthier C, Kraner H. IEEE Trans. Nucl. Sci. 1995; 42: 12.
11. Sze SM. Physics of Semiconductor Devices. Wiley: Chichester, 1981.
12. Thurmond CD. J. Electrochem. Soc. 1975; 122: 1133.
13. Bertuccio G, Fasoli L, Fiorini C, Gatti E, Longoni A, Sampietro M, Hauff D, Kemmer J, Richter R. Nucl. Instrum. Methods A 1996; 377: 352.
14. Fasoli L, Fiorini C, Longoni A, Sampietro M, Lechner P, Strüder L. In Proceedings of the First IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Pavia, 13-14 September 1996 117.
15. Eggert T, Goldstrass P, Kemmer J, Pahlke A. Nucl. Instrum. Methods A 2003; 512: 257.