The role of the multi buffer layer technique on the structural quality of GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Benamara, M ^a   Liliental Weber, Z ^a   Mazur, J H ^a,b   Swider, W ^a   Washburn, J ^a   Iwaya, M ^c   Akasaki, I ^c   Amano, H ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b NXP SEMICONDUCTORS   (Netherlands)

^c MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; EDGE DISLOCATIONS; STRUCTURAL QUALITY;

GALLIUM NITRIDE;

EID: 3242750621     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300004567     Document Type: Conference Paper

References (4)

1. S. Nakamura and G. Fasol, The blue Laser Diode, (Springer, Berlin, 1997).
2. Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting and R. D. Dupuis, MRS Internet J. Nitride Semicond. Res. 4S1, G4.6 (1999)
3. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M.Katsuragawa, T. Takeuchi, C.Wetzel and I.Akasaki, MRS Internet J. Nitride Semicond. Res. 4S1, G10.1 (1999).
4. S. Ruvimov, Z. Liliental-Weber, J. Washburn, Y. Kim, G. S. Sudhir, J. Krueger and E. R. Weber, Mat. Res. Soc. Proc. Vol. 572, 295 (1999).