Estimation of schottky contacts to porous Si by photoacoustic spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 B, 2004, Pages 2932-2935

  Kawahara, Toshio ^a   Funaki, Shingo ^a   Okamoto, Masaki ^a   Inoue, Yoshihiro ^a   Tahira, Kenichiro ^a   Okamoto, Yoichi ^a   Morimoto, Jun ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

I V characteristics; PAS; Photoacoustic spectroscopy; Porous Si; Schottky contacts

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC CONTACTS; ELECTROLUMINESCENCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROCHLORIC ACID; MICROPHONES; PHOTOACOUSTIC SPECTROSCOPY; SURFACE TREATMENT; VIBRATIONS (MECHANICAL);

INJECTION CURRENT; SCHOTTKY CONTACTS; SURFACE CONDITIONS; SURFACE STATES;

POROUS SILICON;

EID: 3242750557     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2932     Document Type: Conference Paper

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